Standard enthalpies of formation of ThAl2, ThSi2, ThGe2 and Th5Sn3, determined by high-temperature direct synthesis calorimetry

GIG OpenIR > 中科院广州地化所(-2008)

	Wang JW; Guo QT; Kleppa OJ
	Standard enthalpies of formation of ThAl2, ThSi2, ThGe2 and Th5Sn3, determined by high-temperature direct synthesis calorimetry
Source Publication	Journal of Alloys and Compounds
ISSN	0925-8388
	2000
Volume	313 Issue:1-2 Pages:148-153
Language	英语
WOS ID	WOS:000166233600028
Indexed By	sci
Citation statistics	Cited Times:3[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.gig.ac.cn/handle/344008/11707
Collection	中科院广州地化所(-2008)
Recommended Citation GB/T 7714	Wang JW,Guo QT,Kleppa OJ. Standard enthalpies of formation of ThAl2, ThSi2, ThGe2 and Th5Sn3, determined by high-temperature direct synthesis calorimetry[J]. Journal of Alloys and Compounds,2000,313(1-2):148-153.
APA	Wang JW,Guo QT,&Kleppa OJ.(2000).Standard enthalpies of formation of ThAl2, ThSi2, ThGe2 and Th5Sn3, determined by high-temperature direct synthesis calorimetry.Journal of Alloys and Compounds,313(1-2),148-153.
MLA	Wang JW,et al."Standard enthalpies of formation of ThAl2, ThSi2, ThGe2 and Th5Sn3, determined by high-temperature direct synthesis calorimetry".Journal of Alloys and Compounds 313.1-2(2000):148-153.

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